Characterization of leakage current in thin gate oxide subjected to 10 KeV X-ray irradiation
10.1109/16.824744
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sg-nus-scholar.10635-619312023-10-30T07:52:52Z Characterization of leakage current in thin gate oxide subjected to 10 KeV X-ray irradiation Ling, C.H. Ang, C.H. Ang, D.S. ELECTRICAL ENGINEERING BACHELOR OF TECHNOLOGY PROGRAMME 10.1109/16.824744 IEEE Transactions on Electron Devices 47 3 650-652 IETDA 2014-06-17T06:45:35Z 2014-06-17T06:45:35Z 2000 Article Ling, C.H., Ang, C.H., Ang, D.S. (2000). Characterization of leakage current in thin gate oxide subjected to 10 KeV X-ray irradiation. IEEE Transactions on Electron Devices 47 (3) : 650-652. ScholarBank@NUS Repository. https://doi.org/10.1109/16.824744 00189383 http://scholarbank.nus.edu.sg/handle/10635/61931 000085766300024 Scopus |
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ELECTRICAL ENGINEERING |
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ELECTRICAL ENGINEERING Ling, C.H. Ang, C.H. Ang, D.S. |
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Ling, C.H. Ang, C.H. Ang, D.S. |
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Ling, C.H. Ang, C.H. Ang, D.S. Characterization of leakage current in thin gate oxide subjected to 10 KeV X-ray irradiation |
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Ling, C.H. |
title |
Characterization of leakage current in thin gate oxide subjected to 10 KeV X-ray irradiation |
title_short |
Characterization of leakage current in thin gate oxide subjected to 10 KeV X-ray irradiation |
title_full |
Characterization of leakage current in thin gate oxide subjected to 10 KeV X-ray irradiation |
title_fullStr |
Characterization of leakage current in thin gate oxide subjected to 10 KeV X-ray irradiation |
title_full_unstemmed |
Characterization of leakage current in thin gate oxide subjected to 10 KeV X-ray irradiation |
title_sort |
characterization of leakage current in thin gate oxide subjected to 10 kev x-ray irradiation |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/61931 |
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1781782122352082944 |