Characterization of leakage current in thin gate oxide subjected to 10 KeV X-ray irradiation

10.1109/16.824744

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Bibliographic Details
Main Authors: Ling, C.H., Ang, C.H., Ang, D.S.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/61931
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Institution: National University of Singapore
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