Characterization of traps in semi-insulating gallium arsenide buffer layers grown at low temperature by molecular beam epitaxy with an improved zero-bias thermally stimurated current technique

Characterization of traps in semi-insulating gallium arsenide buffer layers grown at low temperature by molecular beam epitaxy with an improved zero-bias thermally stimurated current technique

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

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Bibliographic Details
Main Authors: Lau, Wai Shing, Chong, Tow Chong, Tan, Leng Seow, Goo, Chuen Hang, Goh, Kian Seng
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/61933
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Institution: National University of Singapore
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Summary:Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

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