Characterization of traps in semi-insulating gallium arsenide buffer layers grown at low temperature by molecular beam epitaxy with an improved zero-bias thermally stimurated current technique

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

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Main Authors:	Lau, Wai Shing, Chong, Tow Chong, Tan, Leng Seow, Goo, Chuen Hang, Goh, Kian Seng
Other Authors:	ELECTRICAL ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/61933
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-61933
record_format	dspace
spelling	sg-nus-scholar.10635-619332015-01-08T08:43:54Z Characterization of traps in semi-insulating gallium arsenide buffer layers grown at low temperature by molecular beam epitaxy with an improved zero-bias thermally stimurated current technique Lau, Wai Shing Chong, Tow Chong Tan, Leng Seow Goo, Chuen Hang Goh, Kian Seng ELECTRICAL ENGINEERING Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 30 11 A 1843-1846 JAPLD 2014-06-17T06:45:37Z 2014-06-17T06:45:37Z 1991-11-01 Article Lau, Wai Shing,Chong, Tow Chong,Tan, Leng Seow,Goo, Chuen Hang,Goh, Kian Seng (1991-11-01). Characterization of traps in semi-insulating gallium arsenide buffer layers grown at low temperature by molecular beam epitaxy with an improved zero-bias thermally stimurated current technique. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 30 (11 A) : 1843-1846. ScholarBank@NUS Repository. 00214922 http://scholarbank.nus.edu.sg/handle/10635/61933 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
author2	ELECTRICAL ENGINEERING
author_facet	ELECTRICAL ENGINEERING Lau, Wai Shing Chong, Tow Chong Tan, Leng Seow Goo, Chuen Hang Goh, Kian Seng
format	Article
author	Lau, Wai Shing Chong, Tow Chong Tan, Leng Seow Goo, Chuen Hang Goh, Kian Seng
spellingShingle	Lau, Wai Shing Chong, Tow Chong Tan, Leng Seow Goo, Chuen Hang Goh, Kian Seng Characterization of traps in semi-insulating gallium arsenide buffer layers grown at low temperature by molecular beam epitaxy with an improved zero-bias thermally stimurated current technique
author_sort	Lau, Wai Shing
title	Characterization of traps in semi-insulating gallium arsenide buffer layers grown at low temperature by molecular beam epitaxy with an improved zero-bias thermally stimurated current technique
title_short	Characterization of traps in semi-insulating gallium arsenide buffer layers grown at low temperature by molecular beam epitaxy with an improved zero-bias thermally stimurated current technique
title_full	Characterization of traps in semi-insulating gallium arsenide buffer layers grown at low temperature by molecular beam epitaxy with an improved zero-bias thermally stimurated current technique
title_fullStr	Characterization of traps in semi-insulating gallium arsenide buffer layers grown at low temperature by molecular beam epitaxy with an improved zero-bias thermally stimurated current technique
title_full_unstemmed	Characterization of traps in semi-insulating gallium arsenide buffer layers grown at low temperature by molecular beam epitaxy with an improved zero-bias thermally stimurated current technique
title_sort	characterization of traps in semi-insulating gallium arsenide buffer layers grown at low temperature by molecular beam epitaxy with an improved zero-bias thermally stimurated current technique
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/61933
_version_	1681085683585777664

Characterization of traps in semi-insulating gallium arsenide buffer layers grown at low temperature by molecular beam epitaxy with an improved zero-bias thermally stimurated current technique

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