Investigation of the role of hot holes and hot electrons in the generation of interface states in submicrometre MOSFETs using a new charge-profiling technique based on charge-pumping measurements

Investigation of the role of hot holes and hot electrons in the generation of interface states in submicrometre MOSFETs using a new charge-profiling technique based on charge-pumping measurements

Semiconductor Science and Technology

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Bibliographic Details
Main Authors: Chan, D.S.H., Leang, S.E., Chim, W.K.
Other Authors: ELECTRICAL ENGINEERING
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/62357
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Institution: National University of Singapore
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Summary:Semiconductor Science and Technology

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