Investigation of the role of hot holes and hot electrons in the generation of interface states in submicrometre MOSFETs using a new charge-profiling technique based on charge-pumping measurements

Semiconductor Science and Technology

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Main Authors:	Chan, D.S.H., Leang, S.E., Chim, W.K.
Other Authors:	ELECTRICAL ENGINEERING
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/62357
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-62357
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spelling	sg-nus-scholar.10635-623572021-10-05T10:02:24Z Investigation of the role of hot holes and hot electrons in the generation of interface states in submicrometre MOSFETs using a new charge-profiling technique based on charge-pumping measurements Chan, D.S.H. Leang, S.E. Chim, W.K. ELECTRICAL ENGINEERING Semiconductor Science and Technology 13 9 976-980 SSTEE 2014-06-17T06:50:10Z 2014-06-17T06:50:10Z 1998-09 Chan, D.S.H., Leang, S.E., Chim, W.K. (1998-09). Investigation of the role of hot holes and hot electrons in the generation of interface states in submicrometre MOSFETs using a new charge-profiling technique based on charge-pumping measurements. Semiconductor Science and Technology 13 (9) : 976-980. ScholarBank@NUS Repository. 02681242 http://scholarbank.nus.edu.sg/handle/10635/62357 000075965600003 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	Semiconductor Science and Technology
author2	ELECTRICAL ENGINEERING
author_facet	ELECTRICAL ENGINEERING Chan, D.S.H. Leang, S.E. Chim, W.K.
author	Chan, D.S.H. Leang, S.E. Chim, W.K.
spellingShingle	Chan, D.S.H. Leang, S.E. Chim, W.K. Investigation of the role of hot holes and hot electrons in the generation of interface states in submicrometre MOSFETs using a new charge-profiling technique based on charge-pumping measurements
author_sort	Chan, D.S.H.
title	Investigation of the role of hot holes and hot electrons in the generation of interface states in submicrometre MOSFETs using a new charge-profiling technique based on charge-pumping measurements
title_short	Investigation of the role of hot holes and hot electrons in the generation of interface states in submicrometre MOSFETs using a new charge-profiling technique based on charge-pumping measurements
title_full	Investigation of the role of hot holes and hot electrons in the generation of interface states in submicrometre MOSFETs using a new charge-profiling technique based on charge-pumping measurements
title_fullStr	Investigation of the role of hot holes and hot electrons in the generation of interface states in submicrometre MOSFETs using a new charge-profiling technique based on charge-pumping measurements
title_full_unstemmed	Investigation of the role of hot holes and hot electrons in the generation of interface states in submicrometre MOSFETs using a new charge-profiling technique based on charge-pumping measurements
title_sort	investigation of the role of hot holes and hot electrons in the generation of interface states in submicrometre mosfets using a new charge-profiling technique based on charge-pumping measurements
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/62357
_version_	1713205671032258560

Investigation of the role of hot holes and hot electrons in the generation of interface states in submicrometre MOSFETs using a new charge-profiling technique based on charge-pumping measurements

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