Numerical simulation of backgating suppression in high electron mobility transistors (HEMTs) with a low temperature molecular beam epitaxy (MBE)-grown gallium arsenide buffer layer between the substrate and active layers
Japanese Journal of Applied Physics, Part 2: Letters
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sg-nus-scholar.10635-625062015-01-13T22:41:48Z Numerical simulation of backgating suppression in high electron mobility transistors (HEMTs) with a low temperature molecular beam epitaxy (MBE)-grown gallium arsenide buffer layer between the substrate and active layers Tan, Leng Seow Lau, Wai Shing Samudra, Ganesh Shankar Lee, Kin Man Ang, Boon Yong ELECTRICAL ENGINEERING Japanese Journal of Applied Physics, Part 2: Letters 33 6 B L826-L829 JAPLD 2014-06-17T06:51:49Z 2014-06-17T06:51:49Z 1994 Article Tan, Leng Seow,Lau, Wai Shing,Samudra, Ganesh Shankar,Lee, Kin Man,Ang, Boon Yong (1994). Numerical simulation of backgating suppression in high electron mobility transistors (HEMTs) with a low temperature molecular beam epitaxy (MBE)-grown gallium arsenide buffer layer between the substrate and active layers. Japanese Journal of Applied Physics, Part 2: Letters 33 (6 B) : L826-L829. ScholarBank@NUS Repository. 00214922 http://scholarbank.nus.edu.sg/handle/10635/62506 NOT_IN_WOS Scopus |
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ScholarBank@NUS |
| description |
Japanese Journal of Applied Physics, Part 2: Letters |
| author2 |
ELECTRICAL ENGINEERING |
| author_facet |
ELECTRICAL ENGINEERING Tan, Leng Seow Lau, Wai Shing Samudra, Ganesh Shankar Lee, Kin Man Ang, Boon Yong |
| format |
Article |
| author |
Tan, Leng Seow Lau, Wai Shing Samudra, Ganesh Shankar Lee, Kin Man Ang, Boon Yong |
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Tan, Leng Seow Lau, Wai Shing Samudra, Ganesh Shankar Lee, Kin Man Ang, Boon Yong Numerical simulation of backgating suppression in high electron mobility transistors (HEMTs) with a low temperature molecular beam epitaxy (MBE)-grown gallium arsenide buffer layer between the substrate and active layers |
| author_sort |
Tan, Leng Seow |
| title |
Numerical simulation of backgating suppression in high electron mobility transistors (HEMTs) with a low temperature molecular beam epitaxy (MBE)-grown gallium arsenide buffer layer between the substrate and active layers |
| title_short |
Numerical simulation of backgating suppression in high electron mobility transistors (HEMTs) with a low temperature molecular beam epitaxy (MBE)-grown gallium arsenide buffer layer between the substrate and active layers |
| title_full |
Numerical simulation of backgating suppression in high electron mobility transistors (HEMTs) with a low temperature molecular beam epitaxy (MBE)-grown gallium arsenide buffer layer between the substrate and active layers |
| title_fullStr |
Numerical simulation of backgating suppression in high electron mobility transistors (HEMTs) with a low temperature molecular beam epitaxy (MBE)-grown gallium arsenide buffer layer between the substrate and active layers |
| title_full_unstemmed |
Numerical simulation of backgating suppression in high electron mobility transistors (HEMTs) with a low temperature molecular beam epitaxy (MBE)-grown gallium arsenide buffer layer between the substrate and active layers |
| title_sort |
numerical simulation of backgating suppression in high electron mobility transistors (hemts) with a low temperature molecular beam epitaxy (mbe)-grown gallium arsenide buffer layer between the substrate and active layers |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/62506 |
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1681085788258828288 |