Numerical simulation of backgating suppression in high electron mobility transistors (HEMTs) with a low temperature molecular beam epitaxy (MBE)-grown gallium arsenide buffer layer between the substrate and active layers
Japanese Journal of Applied Physics, Part 2: Letters
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| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Article |
| Published: |
2014
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| Online Access: | http://scholarbank.nus.edu.sg/handle/10635/62506 |
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| Institution: | National University of Singapore |