Quantitative imaging of local defects in very thin silicon dioxide films at low bias voltage by true oxide electron-beam-induced current

Quantitative imaging of local defects in very thin silicon dioxide films at low bias voltage by true oxide electron-beam-induced current

Journal of Applied Physics

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Bibliographic Details
Main Authors: Lau, W.S., Chan, D.S.H., Phang, J.C.H., Chow, K.W., Pey, K.S., Lim, Y.P., Sane, V., Cronquist, B.
Other Authors: ELECTRICAL ENGINEERING
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/62661
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Institution: National University of Singapore
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Summary:Journal of Applied Physics

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