Quantitative imaging of local defects in very thin silicon dioxide films at low bias voltage by true oxide electron-beam-induced current

Journal of Applied Physics

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Bibliographic Details
Main Authors:	Lau, W.S., Chan, D.S.H., Phang, J.C.H., Chow, K.W., Pey, K.S., Lim, Y.P., Sane, V., Cronquist, B.
Other Authors:	ELECTRICAL ENGINEERING
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/62661
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-62661
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spelling	sg-nus-scholar.10635-626612021-10-05T09:51:13Z Quantitative imaging of local defects in very thin silicon dioxide films at low bias voltage by true oxide electron-beam-induced current Lau, W.S. Chan, D.S.H. Phang, J.C.H. Chow, K.W. Pey, K.S. Lim, Y.P. Sane, V. Cronquist, B. ELECTRICAL ENGINEERING Journal of Applied Physics 77 2 739-746 2014-06-17T06:53:30Z 2014-06-17T06:53:30Z 1995 Lau, W.S., Chan, D.S.H., Phang, J.C.H., Chow, K.W., Pey, K.S., Lim, Y.P., Sane, V., Cronquist, B. (1995). Quantitative imaging of local defects in very thin silicon dioxide films at low bias voltage by true oxide electron-beam-induced current. Journal of Applied Physics 77 (2) : 739-746. ScholarBank@NUS Repository. 00218979 http://scholarbank.nus.edu.sg/handle/10635/62661 A1995QB22300042 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	Journal of Applied Physics
author2	ELECTRICAL ENGINEERING
author_facet	ELECTRICAL ENGINEERING Lau, W.S. Chan, D.S.H. Phang, J.C.H. Chow, K.W. Pey, K.S. Lim, Y.P. Sane, V. Cronquist, B.
author	Lau, W.S. Chan, D.S.H. Phang, J.C.H. Chow, K.W. Pey, K.S. Lim, Y.P. Sane, V. Cronquist, B.
spellingShingle	Lau, W.S. Chan, D.S.H. Phang, J.C.H. Chow, K.W. Pey, K.S. Lim, Y.P. Sane, V. Cronquist, B. Quantitative imaging of local defects in very thin silicon dioxide films at low bias voltage by true oxide electron-beam-induced current
author_sort	Lau, W.S.
title	Quantitative imaging of local defects in very thin silicon dioxide films at low bias voltage by true oxide electron-beam-induced current
title_short	Quantitative imaging of local defects in very thin silicon dioxide films at low bias voltage by true oxide electron-beam-induced current
title_full	Quantitative imaging of local defects in very thin silicon dioxide films at low bias voltage by true oxide electron-beam-induced current
title_fullStr	Quantitative imaging of local defects in very thin silicon dioxide films at low bias voltage by true oxide electron-beam-induced current
title_full_unstemmed	Quantitative imaging of local defects in very thin silicon dioxide films at low bias voltage by true oxide electron-beam-induced current
title_sort	quantitative imaging of local defects in very thin silicon dioxide films at low bias voltage by true oxide electron-beam-induced current
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/62661
_version_	1713205684358610944

Quantitative imaging of local defects in very thin silicon dioxide films at low bias voltage by true oxide electron-beam-induced current

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