Quantitative imaging of local defects in very thin silicon dioxide films at low bias voltage by true oxide electron-beam-induced current
Journal of Applied Physics
Saved in:
Main Authors: | Lau, W.S., Chan, D.S.H., Phang, J.C.H., Chow, K.W., Pey, K.S., Lim, Y.P., Sane, V., Cronquist, B. |
---|---|
Other Authors: | ELECTRICAL ENGINEERING |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/62661 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Quantitative imaging of local defects in very thin silicon dioxide films at low bias voltage by true oxide electron-beam-induced current
by: Lau, W.S., et al.
Published: (2014) -
True oxide electron beam induced current for low-voltage imaging of local defects in very thin silicon dioxide films
by: Lau, W.S., et al.
Published: (2014) -
True oxide electron beam induced current for low-voltage imaging of local defects in very thin silicon dioxide films
by: Lau, W.S., et al.
Published: (2014) -
New low-voltage contrast mechanism to image local defects in very thin silicon dioxide films. True oxide electron beam induced current
by: Lau, W.S., et al.
Published: (2014) -
New low-voltage contrast mechanism to image local defects in very thin silicon dioxide films. True oxide electron beam induced current
by: Lau, W.S., et al.
Published: (2014)