Nonlocal hot-electron injection as the mechanism for the predominant source-side gate oxide degradation in CHE-stressed deep submicrometer n-MOSFETs

10.1109/LED.2004.828566

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Bibliographic Details
Main Authors:	Ang, D.S., Liao, H., Ling, C.H.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Others
Published:	2014
Subjects:	Hot-carrier induced degradation Stress-induced gate leakage current (SILC) Substrate-enhanced gate injection current Ultrathin gate oxide
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/68003
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-68003
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spelling	sg-nus-scholar.10635-680032024-11-08T18:01:35Z Nonlocal hot-electron injection as the mechanism for the predominant source-side gate oxide degradation in CHE-stressed deep submicrometer n-MOSFETs Ang, D.S. Liao, H. Ling, C.H. ELECTRICAL & COMPUTER ENGINEERING Hot-carrier induced degradation Stress-induced gate leakage current (SILC) Substrate-enhanced gate injection current Ultrathin gate oxide 10.1109/LED.2004.828566 IEEE Electron Device Letters 25 6 417-419 EDLED 2014-06-18T05:33:22Z 2014-06-18T05:33:22Z 2004-06 Others Ang, D.S., Liao, H., Ling, C.H. (2004-06). Nonlocal hot-electron injection as the mechanism for the predominant source-side gate oxide degradation in CHE-stressed deep submicrometer n-MOSFETs. IEEE Electron Device Letters 25 (6) : 417-419. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2004.828566 07413106 http://scholarbank.nus.edu.sg/handle/10635/68003 000221659700025 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Hot-carrier induced degradation Stress-induced gate leakage current (SILC) Substrate-enhanced gate injection current Ultrathin gate oxide
spellingShingle	Hot-carrier induced degradation Stress-induced gate leakage current (SILC) Substrate-enhanced gate injection current Ultrathin gate oxide Ang, D.S. Liao, H. Ling, C.H. Nonlocal hot-electron injection as the mechanism for the predominant source-side gate oxide degradation in CHE-stressed deep submicrometer n-MOSFETs
description	10.1109/LED.2004.828566
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Ang, D.S. Liao, H. Ling, C.H.
format	Others
author	Ang, D.S. Liao, H. Ling, C.H.
author_sort	Ang, D.S.
title	Nonlocal hot-electron injection as the mechanism for the predominant source-side gate oxide degradation in CHE-stressed deep submicrometer n-MOSFETs
title_short	Nonlocal hot-electron injection as the mechanism for the predominant source-side gate oxide degradation in CHE-stressed deep submicrometer n-MOSFETs
title_full	Nonlocal hot-electron injection as the mechanism for the predominant source-side gate oxide degradation in CHE-stressed deep submicrometer n-MOSFETs
title_fullStr	Nonlocal hot-electron injection as the mechanism for the predominant source-side gate oxide degradation in CHE-stressed deep submicrometer n-MOSFETs
title_full_unstemmed	Nonlocal hot-electron injection as the mechanism for the predominant source-side gate oxide degradation in CHE-stressed deep submicrometer n-MOSFETs
title_sort	nonlocal hot-electron injection as the mechanism for the predominant source-side gate oxide degradation in che-stressed deep submicrometer n-mosfets
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/68003
_version_	1821203154458378240

Nonlocal hot-electron injection as the mechanism for the predominant source-side gate oxide degradation in CHE-stressed deep submicrometer n-MOSFETs

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