Nonlocal hot-electron injection as the mechanism for the predominant source-side gate oxide degradation in CHE-stressed deep submicrometer n-MOSFETs

10.1109/LED.2004.828566

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Bibliographic Details
Main Authors: Ang, D.S., Liao, H., Ling, C.H.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Others
Published: 2014
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Online Access:http://scholarbank.nus.edu.sg/handle/10635/68003
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Institution: National University of Singapore

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