Nonlocal hot-electron injection as the mechanism for the predominant source-side gate oxide degradation in CHE-stressed deep submicrometer n-MOSFETs
10.1109/LED.2004.828566
Saved in:
Main Authors: | Ang, D.S., Liao, H., Ling, C.H. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Others |
Published: |
2014
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/68003 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Evidence for a composite interface state generation mode in the CHE-stressed deep-submicrometer n-MOSFET
by: Ang, D.S., et al.
Published: (2014) -
Localized oxide degradation in ultrathin gate dielectric and its statistical analysis
by: Loh, W.Y., et al.
Published: (2014) -
Investigation of quasi-breakdown mechanism through post-quasi-breakdown thermal annealing
by: Loh, W.Y., et al.
Published: (2014) -
Reliability of thin gate oxides irradiated under X-ray lithography conditions
by: Cho, B.J., et al.
Published: (2014) -
Stress-induced leakage current in dual-gate CMOSFETS with thin nitrided gate oxides
by: HUANG JINSHENG
Published: (2010)