Effect of V/III ratio on extended defects in InGaAlP measured by isothermal DLTS

Effect of V/III ratio on extended defects in InGaAlP measured by isothermal DLTS

10.1117/12.447100

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Bibliographic Details
Main Authors: Lim, H.F., Chua, S.J., Dong, J.R., Chi, D.Z., Soh, C.B.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Subjects:
Capture barrier
Extended defect
InGaAlP
Isothermal
Logarithmic dependence
Online Access:http://scholarbank.nus.edu.sg/handle/10635/70091
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Institution: National University of Singapore
Description
Summary:10.1117/12.447100

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