Effect of V/III ratio on extended defects in InGaAlP measured by isothermal DLTS

10.1117/12.447100

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Main Authors: Lim, H.F., Chua, S.J., Dong, J.R., Chi, D.Z., Soh, C.B.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
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Online Access:http://scholarbank.nus.edu.sg/handle/10635/70091
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-700912023-10-27T08:50:27Z Effect of V/III ratio on extended defects in InGaAlP measured by isothermal DLTS Lim, H.F. Chua, S.J. Dong, J.R. Chi, D.Z. Soh, C.B. ELECTRICAL & COMPUTER ENGINEERING Capture barrier Extended defect InGaAlP Isothermal Logarithmic dependence 10.1117/12.447100 Proceedings of SPIE - The International Society for Optical Engineering 4598 125-132 PSISD 2014-06-19T03:08:07Z 2014-06-19T03:08:07Z 2001 Conference Paper Lim, H.F., Chua, S.J., Dong, J.R., Chi, D.Z., Soh, C.B. (2001). Effect of V/III ratio on extended defects in InGaAlP measured by isothermal DLTS. Proceedings of SPIE - The International Society for Optical Engineering 4598 : 125-132. ScholarBank@NUS Repository. https://doi.org/10.1117/12.447100 0277786X http://scholarbank.nus.edu.sg/handle/10635/70091 000174463800015 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
topic Capture barrier
Extended defect
InGaAlP
Isothermal
Logarithmic dependence
spellingShingle Capture barrier
Extended defect
InGaAlP
Isothermal
Logarithmic dependence
Lim, H.F.
Chua, S.J.
Dong, J.R.
Chi, D.Z.
Soh, C.B.
Effect of V/III ratio on extended defects in InGaAlP measured by isothermal DLTS
description 10.1117/12.447100
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Lim, H.F.
Chua, S.J.
Dong, J.R.
Chi, D.Z.
Soh, C.B.
format Conference or Workshop Item
author Lim, H.F.
Chua, S.J.
Dong, J.R.
Chi, D.Z.
Soh, C.B.
author_sort Lim, H.F.
title Effect of V/III ratio on extended defects in InGaAlP measured by isothermal DLTS
title_short Effect of V/III ratio on extended defects in InGaAlP measured by isothermal DLTS
title_full Effect of V/III ratio on extended defects in InGaAlP measured by isothermal DLTS
title_fullStr Effect of V/III ratio on extended defects in InGaAlP measured by isothermal DLTS
title_full_unstemmed Effect of V/III ratio on extended defects in InGaAlP measured by isothermal DLTS
title_sort effect of v/iii ratio on extended defects in ingaalp measured by isothermal dlts
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/70091
_version_ 1781783138279620608