Full range workfunction tunning of MOSFETs using interfacial yttrium layer in fully germanided Ni gate

Full range workfunction tunning of MOSFETs using interfacial yttrium layer in fully germanided Ni gate

10.1149/1.2727410

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Bibliographic Details
Main Authors: Yu, H.P., Pey, K.L., Choi, W.K., Antoniadis, D.A., Fitzgerald, E.A., Dawood, M.K., Ow, K.Q., Chi, D.Z.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/70390
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Institution: National University of Singapore
id sg-nus-scholar.10635-70390
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spelling sg-nus-scholar.10635-703902015-04-20T10:34:14Z Full range workfunction tunning of MOSFETs using interfacial yttrium layer in fully germanided Ni gate Yu, H.P. Pey, K.L. Choi, W.K. Antoniadis, D.A. Fitzgerald, E.A. Dawood, M.K. Ow, K.Q. Chi, D.Z. ELECTRICAL & COMPUTER ENGINEERING 10.1149/1.2727410 ECS Transactions 6 1 271-277 2014-06-19T03:11:37Z 2014-06-19T03:11:37Z 2007 Conference Paper Yu, H.P.,Pey, K.L.,Choi, W.K.,Antoniadis, D.A.,Fitzgerald, E.A.,Dawood, M.K.,Ow, K.Q.,Chi, D.Z. (2007). Full range workfunction tunning of MOSFETs using interfacial yttrium layer in fully germanided Ni gate. ECS Transactions 6 (1) : 271-277. ScholarBank@NUS Repository. <a href="https://doi.org/10.1149/1.2727410" target="_blank">https://doi.org/10.1149/1.2727410</a> 9781566775502 19385862 http://scholarbank.nus.edu.sg/handle/10635/70390 NOT_IN_WOS Scopus
institution National University of Singapore
building NUS Library
country Singapore
collection ScholarBank@NUS
description 10.1149/1.2727410
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Yu, H.P.
Pey, K.L.
Choi, W.K.
Antoniadis, D.A.
Fitzgerald, E.A.
Dawood, M.K.
Ow, K.Q.
Chi, D.Z.
format Conference or Workshop Item
author Yu, H.P.
Pey, K.L.
Choi, W.K.
Antoniadis, D.A.
Fitzgerald, E.A.
Dawood, M.K.
Ow, K.Q.
Chi, D.Z.
spellingShingle Yu, H.P.
Pey, K.L.
Choi, W.K.
Antoniadis, D.A.
Fitzgerald, E.A.
Dawood, M.K.
Ow, K.Q.
Chi, D.Z.
Full range workfunction tunning of MOSFETs using interfacial yttrium layer in fully germanided Ni gate
author_sort Yu, H.P.
title Full range workfunction tunning of MOSFETs using interfacial yttrium layer in fully germanided Ni gate
title_short Full range workfunction tunning of MOSFETs using interfacial yttrium layer in fully germanided Ni gate
title_full Full range workfunction tunning of MOSFETs using interfacial yttrium layer in fully germanided Ni gate
title_fullStr Full range workfunction tunning of MOSFETs using interfacial yttrium layer in fully germanided Ni gate
title_full_unstemmed Full range workfunction tunning of MOSFETs using interfacial yttrium layer in fully germanided Ni gate
title_sort full range workfunction tunning of mosfets using interfacial yttrium layer in fully germanided ni gate
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/70390
_version_ 1681087190553067520

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