Full range workfunction tunning of MOSFETs using interfacial yttrium layer in fully germanided Ni gate
10.1149/1.2727410
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| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Conference or Workshop Item |
| Published: |
2014
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| Online Access: | http://scholarbank.nus.edu.sg/handle/10635/70390 |
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| Institution: | National University of Singapore |