High-quality surface passivation of low-resistivity p-type C-Si by hydrogenated amorphous silicon nitride deposited by industrial-scale microwave PECVD

High-quality surface passivation of low-resistivity p-type C-Si by hydrogenated amorphous silicon nitride deposited by industrial-scale microwave PECVD

10.1109/PVSC.2011.6186223

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Bibliographic Details
Main Authors: Dutta Gupta, S., Hoex, B., Lin, F., Mueller, T., Aberle, A.G.
Other Authors: SOLAR ENERGY RESEARCH INST OF S'PORE
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/70486
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Institution: National University of Singapore
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Summary:10.1109/PVSC.2011.6186223

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