High-quality surface passivation of low-resistivity p-type C-Si by hydrogenated amorphous silicon nitride deposited by industrial-scale microwave PECVD
10.1109/PVSC.2011.6186223
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Main Authors: | Dutta Gupta, S., Hoex, B., Lin, F., Mueller, T., Aberle, A.G. |
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Other Authors: | SOLAR ENERGY RESEARCH INST OF S'PORE |
Format: | Conference or Workshop Item |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/70486 |
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Institution: | National University of Singapore |
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