High-quality surface passivation of low-resistivity p-type C-Si by hydrogenated amorphous silicon nitride deposited by industrial-scale microwave PECVD

10.1109/PVSC.2011.6186223

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Bibliographic Details
Main Authors:	Dutta Gupta, S., Hoex, B., Lin, F., Mueller, T., Aberle, A.G.
Other Authors:	SOLAR ENERGY RESEARCH INST OF S'PORE
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/70486
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-70486
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spelling	sg-nus-scholar.10635-704862015-01-16T05:57:38Z High-quality surface passivation of low-resistivity p-type C-Si by hydrogenated amorphous silicon nitride deposited by industrial-scale microwave PECVD Dutta Gupta, S. Hoex, B. Lin, F. Mueller, T. Aberle, A.G. SOLAR ENERGY RESEARCH INST OF S'PORE ELECTRICAL & COMPUTER ENGINEERING 10.1109/PVSC.2011.6186223 Conference Record of the IEEE Photovoltaic Specialists Conference 001421-001423 CRCND 2014-06-19T03:12:40Z 2014-06-19T03:12:40Z 2011 Conference Paper Dutta Gupta, S.,Hoex, B.,Lin, F.,Mueller, T.,Aberle, A.G. (2011). High-quality surface passivation of low-resistivity p-type C-Si by hydrogenated amorphous silicon nitride deposited by industrial-scale microwave PECVD. Conference Record of the IEEE Photovoltaic Specialists Conference : 001421-001423. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/PVSC.2011.6186223" target="_blank">https://doi.org/10.1109/PVSC.2011.6186223</a> 9781424499656 01608371 http://scholarbank.nus.edu.sg/handle/10635/70486 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	10.1109/PVSC.2011.6186223
author2	SOLAR ENERGY RESEARCH INST OF S'PORE
author_facet	SOLAR ENERGY RESEARCH INST OF S'PORE Dutta Gupta, S. Hoex, B. Lin, F. Mueller, T. Aberle, A.G.
format	Conference or Workshop Item
author	Dutta Gupta, S. Hoex, B. Lin, F. Mueller, T. Aberle, A.G.
spellingShingle	Dutta Gupta, S. Hoex, B. Lin, F. Mueller, T. Aberle, A.G. High-quality surface passivation of low-resistivity p-type C-Si by hydrogenated amorphous silicon nitride deposited by industrial-scale microwave PECVD
author_sort	Dutta Gupta, S.
title	High-quality surface passivation of low-resistivity p-type C-Si by hydrogenated amorphous silicon nitride deposited by industrial-scale microwave PECVD
title_short	High-quality surface passivation of low-resistivity p-type C-Si by hydrogenated amorphous silicon nitride deposited by industrial-scale microwave PECVD
title_full	High-quality surface passivation of low-resistivity p-type C-Si by hydrogenated amorphous silicon nitride deposited by industrial-scale microwave PECVD
title_fullStr	High-quality surface passivation of low-resistivity p-type C-Si by hydrogenated amorphous silicon nitride deposited by industrial-scale microwave PECVD
title_full_unstemmed	High-quality surface passivation of low-resistivity p-type C-Si by hydrogenated amorphous silicon nitride deposited by industrial-scale microwave PECVD
title_sort	high-quality surface passivation of low-resistivity p-type c-si by hydrogenated amorphous silicon nitride deposited by industrial-scale microwave pecvd
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/70486
_version_	1681087208472182784

High-quality surface passivation of low-resistivity p-type C-Si by hydrogenated amorphous silicon nitride deposited by industrial-scale microwave PECVD

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