High-quality surface passivation of low-resistivity p-type C-Si by hydrogenated amorphous silicon nitride deposited by industrial-scale microwave PECVD

• Main Authors: Dutta Gupta, S., Hoex, B., Lin, F., Mueller, T., Aberle, A.G.
• Other Authors: SOLAR ENERGY RESEARCH INST OF S'PORE
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/70486
• Institution: National University of Singapore

10.1109/PVSC.2011.6186223