III-V MOSFETs: Surface passivation for gate stack, source/drain and channel strain engineering, self-aligned contact metallization

10.1109/ICSICT.2010.5667643

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Main Authors:	Yeo, Y.-C., Chin, H.-C., Gong, X., Guo, H., Zhang, X.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/70520
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-70520
record_format	dspace
spelling	sg-nus-scholar.10635-705202015-01-15T20:24:12Z III-V MOSFETs: Surface passivation for gate stack, source/drain and channel strain engineering, self-aligned contact metallization Yeo, Y.-C. Chin, H.-C. Gong, X. Guo, H. Zhang, X. ELECTRICAL & COMPUTER ENGINEERING 10.1109/ICSICT.2010.5667643 ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings 1298-1301 2014-06-19T03:13:03Z 2014-06-19T03:13:03Z 2010 Conference Paper Yeo, Y.-C.,Chin, H.-C.,Gong, X.,Guo, H.,Zhang, X. (2010). III-V MOSFETs: Surface passivation for gate stack, source/drain and channel strain engineering, self-aligned contact metallization. ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings : 1298-1301. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/ICSICT.2010.5667643" target="_blank">https://doi.org/10.1109/ICSICT.2010.5667643</a> 9781424457984 http://scholarbank.nus.edu.sg/handle/10635/70520 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	10.1109/ICSICT.2010.5667643
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Yeo, Y.-C. Chin, H.-C. Gong, X. Guo, H. Zhang, X.
format	Conference or Workshop Item
author	Yeo, Y.-C. Chin, H.-C. Gong, X. Guo, H. Zhang, X.
spellingShingle	Yeo, Y.-C. Chin, H.-C. Gong, X. Guo, H. Zhang, X. III-V MOSFETs: Surface passivation for gate stack, source/drain and channel strain engineering, self-aligned contact metallization
author_sort	Yeo, Y.-C.
title	III-V MOSFETs: Surface passivation for gate stack, source/drain and channel strain engineering, self-aligned contact metallization
title_short	III-V MOSFETs: Surface passivation for gate stack, source/drain and channel strain engineering, self-aligned contact metallization
title_full	III-V MOSFETs: Surface passivation for gate stack, source/drain and channel strain engineering, self-aligned contact metallization
title_fullStr	III-V MOSFETs: Surface passivation for gate stack, source/drain and channel strain engineering, self-aligned contact metallization
title_full_unstemmed	III-V MOSFETs: Surface passivation for gate stack, source/drain and channel strain engineering, self-aligned contact metallization
title_sort	iii-v mosfets: surface passivation for gate stack, source/drain and channel strain engineering, self-aligned contact metallization
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/70520
_version_	1681087214834941952

III-V MOSFETs: Surface passivation for gate stack, source/drain and channel strain engineering, self-aligned contact metallization

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