III-V MOSFETs: Surface passivation for gate stack, source/drain and channel strain engineering, self-aligned contact metallization

• Main Authors: Yeo, Y.-C., Chin, H.-C., Gong, X., Guo, H., Zhang, X.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/70520
• Institution: National University of Singapore

10.1109/ICSICT.2010.5667643