III-V MOSFETs: Surface passivation for gate stack, source/drain and channel strain engineering, self-aligned contact metallization

III-V MOSFETs: Surface passivation for gate stack, source/drain and channel strain engineering, self-aligned contact metallization

10.1109/ICSICT.2010.5667643

Saved in:

Bibliographic Details
Main Authors:	Yeo, Y.-C., Chin, H.-C., Gong, X., Guo, H., Zhang, X.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/70520
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

Similar Items

M-V MOSFETs: Surface passivation, source/drain and channel strain engineering, self-aligned contact metallization
by: Yeo, Y.-C., et al.
Published: (2014)

Multiple-gate In0.53Ga0.47As channel n-MOSFETs with self-aligned Ni-InGaAs contacts
by: Zhang, X., et al.
Published: (2014)

III-V MOSFETs with a new self-aligned contact
by: Zhang, X., et al.
Published: (2014)

Multiple-gate In 0.53Ga 0.47As Channel n-MOSFETs with self-aligned Ni-InGaAs contacts
by: Zhang, X., et al.
Published: (2014)

A new self-aligned contact technology for III-V MOSFETs
by: Guo, H., et al.
Published: (2014)

Self-aligned NiGeSi contacts on gallium arsenide for III-V MOSFETs
by: Zhang, X., et al.
Published: (2014)

In0.7Ga0.3 as channel n-MOSFET with self-aligned Ni-InGaAs source and drain
by: Zhang, X., et al.
Published: (2014)

A gate-last In0.53Ga0.47As channel FinFET with Molybdenum source/drain contacts
by: Zhang, X., et al.
Published: (2014)

A self-aligned Ni-InGaAs contact technology for InGaAs channel n-MOSFETs
by: Zhang, X., et al.
Published: (2014)

High-performance germanium ω-Gate MuGFET with schottky-barrier nickel germanide source/drain and low-temperature disilane-passivated gate stack
by: Liu, B., et al.
Published: (2014)

SiGe on insulator MOSFET integrated with Schottky source/drain and HfO 2/TaN gate stack
by: Gao, F., et al.
Published: (2014)

Dopant Segregated Schottky (DSS) Source/Drain for Germanium p-MOSFETs with Metal Gate/High-k Dielectric Stack
by: Ya Lim, P.S., et al.
Published: (2014)

Nickel-silicide: Carbon contact technology for N-channel MOSFETs with silicon-carbon source/drain
by: Lee, R.T.P., et al.
Published: (2014)

Self-Aligned Source and Drain Contact Engineering for High Mobility III-V Transistor
by: ZHANG XINGUI
Published: (2013)

Characteristics of self-aligned gate-first Ge p- and n-channel MOSFETs using CVD HfO2 gate dielectric and Si surface passivation
by: Wu, N., et al.
Published: (2014)

Selective wet etching process for Ni-InGaAs contact formation in InGaAs N-MOSFETs with self-aligned source and drain
by: Subramanian, S., et al.
Published: (2014)

Beneath-the-channel Strain-Transfer-Structure (STS) and embedded source/drain stressors for strain and performance enhancement of nanoscale MOSFETs
by: Ang, K.-W., et al.
Published: (2014)

Lattice-mismatched In0.4Ga0.6As Source/Drain stressors with In Situ doping for strained In0.53 Ga0.47 as channel n-MOSFETs
by: Chin, H.-C., et al.
Published: (2014)

Plasma PH3-passivated high mobility inversion InGaAs MOSFET fabricated with self-aligned gate-first process and HfO2/TaN gate stack
by: Lin, J., et al.
Published: (2014)

High-k gate stack formation on strained SiGe substrate for MOSFET applications
by: Zhu, C., et al.
Published: (2014)

Observation of MOSFET degradation due to electrical stressing through gate-to-source and gate-to-drain capacitance measurement
by: Yeow, Y.T., et al.
Published: (2014)

Observation of MOSFET degradation due to electrical stressing through gate-to-source and gate-to-drain capacitance measurement
by: Yeow, Y.T., et al.
Published: (2014)

In situ surface passivation and CMOS-compatible palladium-germanium contacts for surface-channel gallium arsenide MOSFETs
by: Chin, H.-C., et al.
Published: (2014)

A new silane-ammonia surface passivation technology for realizing inversion-type surface-channel aAs N-MOSFET with 160 nm gate length and high-quality metal-gate/high-k dielectric stack
by: Chin, H.-C., et al.
Published: (2014)

Schottky-barrier si nanowire mosfet: Effects of source/drain metals and gate dielectrics
by: Yang, W., et al.
Published: (2014)

Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrode
by: Zhu, S., et al.
Published: (2014)

Ultra-thin-body In 0.7Ga 0.3As-on-nothing N-MOSFET with Pd-InGaAs source/drain contacts enabled by a new self-aligned cavity formation technology
by: Gong, X., et al.
Published: (2014)

Germanium MOSFETs with high-K gate dielectric and advanced source/drain structure
by: ZHANG QINGCHUN
Published: (2010)

Selenium segregation for lowering the contact resistance in ultrathin-body MOSFETs with fully metallized source/drain
by: Wong, H.-S., et al.
Published: (2014)

Advanced source and drain contact engineering for multiple- gate transistors
by: LEE TEK PO RINUS
Published: (2010)

Drivability improvement in Schottky barrier source/drain MOSFETs with strained-Si channel by Schottky barrier height reduction
by: Zhu, S., et al.
Published: (2014)

N-xhannel GaAs MOSFET with TaNHfAlO gate stack formed using in situ vacuum anneal and silane passivation
by: Chin, H.-C., et al.
Published: (2014)

Schottky source/drain MOSFETs on SiGe on insulator with high-K gate dielectric and TaN gate electrode
by: Gao, F., et al.
Published: (2014)

Novel nickel-alloy suicides for source/drain contact resistance reduction in N-channel multiple-gate transistors with sub-35nm gate length
by: Lee, R.T.P., et al.
Published: (2014)

Enhanced strain effects in 25-nm gate-length thin-body nMOSFETs with silicon-carbon source/drain and tensile-stress liner
by: Ang, K.-W., et al.
Published: (2014)

Contact resistance reduction for strained N-MOSFETs with silicon-carbon source/drain utilizing aluminum ion implant and aluminum profile engineering
by: Zhou, Q., et al.
Published: (2014)

Development and characterization of high-k gate stack for Ge MOSFETs
by: Xie, R., et al.
Published: (2014)

Strained silicon-germanium-on-insulator n-MOSFET with embedded silicon source-and-drain stressors
by: Wang, G.H., et al.
Published: (2014)

Hot carrier reliability of strained N-MOSFET with lattice mismatched source/drain stressors
by: Ang, K.-W., et al.
Published: (2014)

Advanced source/drain engineering for MOSFETs: Schottky barrier height tuning for contact resistance reduction
by: Yeo, Y.-C.
Published: (2014)