In situ boron (B) doped germanium (Ge:B) grown on (100), (110), and (111) silicon: Crystal orientation and b incorporation effects

In situ boron (B) doped germanium (Ge:B) grown on (100), (110), and (111) silicon: Crystal orientation and b incorporation effects

10.1149/05009.1025ecst

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Bibliographic Details
Main Authors: Han, G., Zhou, Q., Guo, P., Wang, W., Yang, Y., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/70572
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Institution: National University of Singapore
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Summary:10.1149/05009.1025ecst

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