In situ boron (B) doped germanium (Ge:B) grown on (100), (110), and (111) silicon: Crystal orientation and b incorporation effects

• Main Authors: Han, G., Zhou, Q., Guo, P., Wang, W., Yang, Y., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/70572
• Institution: National University of Singapore

10.1149/05009.1025ecst