In situ boron (B) doped germanium (Ge:B) grown on (100), (110), and (111) silicon: Crystal orientation and b incorporation effects

10.1149/05009.1025ecst

Saved in:

Bibliographic Details
Main Authors:	Han, G., Zhou, Q., Guo, P., Wang, W., Yang, Y., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/70572
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

id	sg-nus-scholar.10635-70572
record_format	dspace
spelling	sg-nus-scholar.10635-705722023-10-27T07:18:41Z In situ boron (B) doped germanium (Ge:B) grown on (100), (110), and (111) silicon: Crystal orientation and b incorporation effects Han, G. Zhou, Q. Guo, P. Wang, W. Yang, Y. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1149/05009.1025ecst ECS Transactions 50 9 1025-1030 2014-06-19T03:13:40Z 2014-06-19T03:13:40Z 2012 Conference Paper Han, G., Zhou, Q., Guo, P., Wang, W., Yang, Y., Yeo, Y.-C. (2012). In situ boron (B) doped germanium (Ge:B) grown on (100), (110), and (111) silicon: Crystal orientation and b incorporation effects. ECS Transactions 50 (9) : 1025-1030. ScholarBank@NUS Repository. https://doi.org/10.1149/05009.1025ecst 9781607683575 19385862 http://scholarbank.nus.edu.sg/handle/10635/70572 000338015300123 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1149/05009.1025ecst
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Han, G. Zhou, Q. Guo, P. Wang, W. Yang, Y. Yeo, Y.-C.
format	Conference or Workshop Item
author	Han, G. Zhou, Q. Guo, P. Wang, W. Yang, Y. Yeo, Y.-C.
spellingShingle	Han, G. Zhou, Q. Guo, P. Wang, W. Yang, Y. Yeo, Y.-C. In situ boron (B) doped germanium (Ge:B) grown on (100), (110), and (111) silicon: Crystal orientation and b incorporation effects
author_sort	Han, G.
title	In situ boron (B) doped germanium (Ge:B) grown on (100), (110), and (111) silicon: Crystal orientation and b incorporation effects
title_short	In situ boron (B) doped germanium (Ge:B) grown on (100), (110), and (111) silicon: Crystal orientation and b incorporation effects
title_full	In situ boron (B) doped germanium (Ge:B) grown on (100), (110), and (111) silicon: Crystal orientation and b incorporation effects
title_fullStr	In situ boron (B) doped germanium (Ge:B) grown on (100), (110), and (111) silicon: Crystal orientation and b incorporation effects
title_full_unstemmed	In situ boron (B) doped germanium (Ge:B) grown on (100), (110), and (111) silicon: Crystal orientation and b incorporation effects
title_sort	in situ boron (b) doped germanium (ge:b) grown on (100), (110), and (111) silicon: crystal orientation and b incorporation effects
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/70572
_version_	1781783167909232640

In situ boron (B) doped germanium (Ge:B) grown on (100), (110), and (111) silicon: Crystal orientation and b incorporation effects

Similar Items