Issues and controversies in NBTI degradation and recovery mechanisms for p-MOSFETs with SiON gate dielectrics

Issues and controversies in NBTI degradation and recovery mechanisms for p-MOSFETs with SiON gate dielectrics

10.1109/ICSICT.2008.4734611

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Bibliographic Details
Main Authors: Li, M.-F., Huang, D., WJLiu, ZYLiu, Luo, Y., CCLiao, LFZhang, ZHGan, Wong, W.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/70704
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Institution: National University of Singapore
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Summary:10.1109/ICSICT.2008.4734611

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