Issues and controversies in NBTI degradation and recovery mechanisms for p-MOSFETs with SiON gate dielectrics
10.1109/ICSICT.2008.4734611
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2014
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sg-nus-scholar.10635-707042023-10-26T21:52:03Z Issues and controversies in NBTI degradation and recovery mechanisms for p-MOSFETs with SiON gate dielectrics Li, M.-F. Huang, D. WJLiu ZYLiu Luo, Y. CCLiao LFZhang ZHGan Wong, W. ELECTRICAL & COMPUTER ENGINEERING 10.1109/ICSICT.2008.4734611 International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 604-607 2014-06-19T03:15:15Z 2014-06-19T03:15:15Z 2008 Conference Paper Li, M.-F., Huang, D., WJLiu, ZYLiu, Luo, Y., CCLiao, LFZhang, ZHGan, Wong, W. (2008). Issues and controversies in NBTI degradation and recovery mechanisms for p-MOSFETs with SiON gate dielectrics. International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT : 604-607. ScholarBank@NUS Repository. https://doi.org/10.1109/ICSICT.2008.4734611 9781424421855 http://scholarbank.nus.edu.sg/handle/10635/70704 000255151700111 Scopus |
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National University of Singapore |
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NUS Library |
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Asia |
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Singapore Singapore |
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NUS Library |
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| description |
10.1109/ICSICT.2008.4734611 |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL & COMPUTER ENGINEERING Li, M.-F. Huang, D. WJLiu ZYLiu Luo, Y. CCLiao LFZhang ZHGan Wong, W. |
| format |
Conference or Workshop Item |
| author |
Li, M.-F. Huang, D. WJLiu ZYLiu Luo, Y. CCLiao LFZhang ZHGan Wong, W. |
| spellingShingle |
Li, M.-F. Huang, D. WJLiu ZYLiu Luo, Y. CCLiao LFZhang ZHGan Wong, W. Issues and controversies in NBTI degradation and recovery mechanisms for p-MOSFETs with SiON gate dielectrics |
| author_sort |
Li, M.-F. |
| title |
Issues and controversies in NBTI degradation and recovery mechanisms for p-MOSFETs with SiON gate dielectrics |
| title_short |
Issues and controversies in NBTI degradation and recovery mechanisms for p-MOSFETs with SiON gate dielectrics |
| title_full |
Issues and controversies in NBTI degradation and recovery mechanisms for p-MOSFETs with SiON gate dielectrics |
| title_fullStr |
Issues and controversies in NBTI degradation and recovery mechanisms for p-MOSFETs with SiON gate dielectrics |
| title_full_unstemmed |
Issues and controversies in NBTI degradation and recovery mechanisms for p-MOSFETs with SiON gate dielectrics |
| title_sort |
issues and controversies in nbti degradation and recovery mechanisms for p-mosfets with sion gate dielectrics |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/70704 |
| _version_ |
1781783176388018176 |