Material and electrical characterization of Ni- And Pt-germanides for p-channel germanium Schottky source/drain transistors

Material and electrical characterization of Ni- And Pt-germanides for p-channel germanium Schottky source/drain transistors

Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06

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Bibliographic Details
Main Authors: Yao, H.B., Tan, C.C., Liew, S.L., Chua, C.T., Chua, C.K., Li, R., Lee, R.T.P., Lee, S.J., Chi, D.Z.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/70887
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Institution: National University of Singapore
Description
Summary:Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06

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