Material and electrical characterization of Ni- And Pt-germanides for p-channel germanium Schottky source/drain transistors

Material and electrical characterization of Ni- And Pt-germanides for p-channel germanium Schottky source/drain transistors

Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06

Saved in:

Bibliographic Details
Main Authors:	Yao, H.B., Tan, C.C., Liew, S.L., Chua, C.T., Chua, C.K., Li, R., Lee, R.T.P., Lee, S.J., Chi, D.Z.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/70887
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

Similar Items

Metal-germanide Schottky Source/Drain transistor on Germanium substrate for future CMOS technology
by: Li, R., et al.
Published: (2014)

Schottky barrier height in germanide/Ge contacts and its engineering through germanidation induced dopant segregation
by: Chi, D.Z., et al.
Published: (2014)

Pt-germanide schottky source/drain germanium p-MOSFET with HfO2 gate dielectric and TaN gate electrode
by: Li, R., et al.
Published: (2014)

Metal-germanide Schottky source/drain transistor with high-k/metal gate stack on Ge and Si0.05Ge0.95/Si substrate
by: Gao, F., et al.
Published: (2014)

Germanium pMOSFETs With Schottky-barrier Germanide S/D, high-Κ gate dielectric and metal gate
by: Zhu, S., et al.
Published: (2014)

High-performance germanium ω-Gate MuGFET with schottky-barrier nickel germanide source/drain and low-temperature disilane-passivated gate stack
by: Liu, B., et al.
Published: (2014)

Effect of the inversion layer on the electrical characterization of Pt germanide/n-Ge (001) Schottky contacts
by: Yao, H.B., et al.
Published: (2014)

Strained silicon nanowire transistors with germanium source and drain stressors
by: Liow, T.-Y., et al.
Published: (2014)

Germanium source and drain stressors for ultrathin-body and nanowire field-effect transistors
by: Liow, T.-Y., et al.
Published: (2014)

Dopant Segregated Schottky (DSS) Source/Drain for Germanium p-MOSFETs with Metal Gate/High-k Dielectric Stack
by: Ya Lim, P.S., et al.
Published: (2014)

Formation and thermal stability of nickel germanide on germanium substrate
by: Zhang, Q., et al.
Published: (2014)

New developments in Schottky source/drain high-k/metal gate CMOS transistors
by: Li, M.-F., et al.
Published: (2014)

ADVANCED SOURCE AND DRAIN CONTACT ENGINEERING FOR GERMANIUM-TIN AND SILICON-GERMANIUM TRANSISTORS
by: XU HAIWEN
Published: (2023)

Platinum germanosilicide as source/drain contacts in P-channel fin field-effect transistors (FinFETs)
by: Lee, R.T.P., et al.
Published: (2014)

Pt-germanide formed by laser annealing and its application for schottky source/drain metal-oxide-semiconductor field-effect transistor integrated with TaN/chemical vapor deposition HfO2/Ge gate stack
by: Li, R., et al.
Published: (2014)

Interface barrier abruptness and work function requirements for scaling Schottky source-drain MOS transistors
by: Agrawal, N., et al.
Published: (2014)

The role of carbon and dysprosium in Ni[Dy]Si:C contacts for schottky-barrier height reduction and application in N-channel MOSFETs with Si:C source/drain stressors
by: Lee, R.T.P., et al.
Published: (2014)

Strain optimization in ultrathin body transistors with silicon-germanium source and drain stressors
by: Madan, A., et al.
Published: (2014)

Schottky source/drain transistor on thin SiGe on insulator integrated with HfO2/TaN gate stack
by: Gao, F., et al.
Published: (2014)

Finite-element study of strain distribution in transistor with silicon-germanium source and drain regions
by: Yeo, Y.-C., et al.
Published: (2014)

Germanium multiple-gate field-effect transistor with in situ boron-doped raised source/drain
by: Liu, B., et al.
Published: (2014)

Demonstration of Schottky barrier NMOS transistors with erbium silicided source/drain and silicon nanowire channel
by: Cui, Guangda, et al.
Published: (2012)

Current-voltage characteristics of Schottky barriers with barrier heights larger than the semiconductor band gap: The case of NiGen- (001) Ge contact
by: Chi, D.Z., et al.
Published: (2014)

Source/drain germanium condensation for P-channel strained ultra-thin body transistors
by: Chui, K.-J., et al.
Published: (2014)

Dark-current suppression in metal-germanium-metal photodetectors through dopant-segregation in NiGe - Schottky barrier
by: Zang, H., et al.
Published: (2014)

Schottky source/drain MOSFETs on SiGe on insulator with high-K gate dielectric and TaN gate electrode
by: Gao, F., et al.
Published: (2014)

Strained silicon-germanium-on-insulator n-channel transistor with silicon source and drain regions for performance enhancement
by: Wang, G.H., et al.
Published: (2014)

N-channel FinFETs with 25-nm gate length and Schottky-Barrier source and drain featuring Ytterbium silicide
by: Lee, R.T.P., et al.
Published: (2014)

Erbium silicided schottky source/drain silicon nanowire N-metal–oxide–semiconductor field-effect transistors
by: Tan, Eu Jin, et al.
Published: (2013)

Schottky source/drain transistor integrated with high-k and metal gate for sub-tenth nm technology
by: LI RUI
Published: (2010)

Strained n-channel transistors with silicon source and drain regions and embedded silicon/germanium as strain-transfer structure
by: Ang, K.-W., et al.
Published: (2014)

Novel extended-Pi shaped silicon - germanium source/drain stressors for strain and performance enhancement in p-channel tri-gate fin-type field-effect transistor
by: Tan, K.-M., et al.
Published: (2014)

N-type Schottky barrier source/drain MOSFET using Ytterbium silicide
by: Zhu, S., et al.
Published: (2014)

Phase and texture of Er-germanide formed on Ge(001) through a solid-state reaction
by: Liew, S.L., et al.
Published: (2014)

Fabrication and characterisation of Silicon-Germanium Schottky diode
by: Tan, Oscar Aik Poh.
Published: (2008)

Fabrication and characterization of silicon-germanium schottky diode
by: Chakravarthi Nanda Kumar
Published: (2010)

SiGe on insulator MOSFET integrated with Schottky source/drain and HfO 2/TaN gate stack
by: Gao, F., et al.
Published: (2014)

Performance benefits of diamond-like carbon liner stressor in strained p-channel field-effect transistors with silicon-germanium source and drain
by: Tan, K.-M., et al.
Published: (2014)

Strained p-channel FinFETs with extended Π-shaped silicon-germanium source and drain stressors
by: Tan, K.-M., et al.
Published: (2014)

Schottky barrier source/drain n-mosfet using ytterbium silicide
by: ZHU, SHIYANG, et al.
Published: (2012)