Pulsed laser annealing of ultra-shallow junctions in silicon-germanium

Pulsed laser annealing of ultra-shallow junctions in silicon-germanium

10.1142/S0219581X10006922

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Bibliographic Details
Main Authors: Tan, L.S., Tan, J.Y., Begum, A., Hong, M.H., Du, A.Y., Bhat, M., Wang, X.C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Subjects:
end-of-range defects
Pulsed laser annealing
ultra-shallow junction
Online Access:http://scholarbank.nus.edu.sg/handle/10635/71526
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Institution: National University of Singapore
Description
Summary:10.1142/S0219581X10006922

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