Comparative study of charge trapping effects in LDD surface-channel and buried-channel PMOS transistors using charge profiling and threshold voltage shift measurements
Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
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| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Conference or Workshop Item |
| Published: |
2014
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| Online Access: | http://scholarbank.nus.edu.sg/handle/10635/72523 |
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| Institution: | National University of Singapore |
| Summary: | Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA |
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