Comparative study of charge trapping effects in LDD surface-channel and buried-channel PMOS transistors using charge profiling and threshold voltage shift measurements
Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Saved in:
Main Authors: | Kok, C.K., Chew, W.C., Chim, W.K., Chan, D.S.H., Leang, S.E. |
---|---|
Other Authors: | ELECTRICAL ENGINEERING |
Format: | Conference or Workshop Item |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/72523 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Direct-current measurements of interface traps and oxide charges in LDD pMOSFETs with an n-well structure
by: Jie, B.B., et al.
Published: (2014) -
Effects of tungsten polycidation on the hot-carrier degradation in buried-channel LDD p-MOSFET's
by: Ang, D.S., et al.
Published: (2014) -
Extraction of metal-oxide-semiconductor field-effect-transistor interface state and trapped charge spatial distributions using a physics-based algorithm
by: Chim, W.K., et al.
Published: (2014) -
Metal oxide charge trapping transistors
by: Leong, Kai Xiang
Published: (2022) -
Frequency dependent dynamic charge trapping in HfO 2 and threshold voltage instability in MOSFETs
by: Shen, C., et al.
Published: (2014)