Direct-current measurements of interface traps and oxide charges in LDD pMOSFETs with an n-well structure

Proceedings of the International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA

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Bibliographic Details
Main Authors: Jie, B.B., Li, M.F., Lou, C.L., Lo, K.F., Chim, W.K., Chan, D.S.H.
Other Authors: ELECTRICAL ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/72582
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Institution: National University of Singapore
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Summary:Proceedings of the International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA