Direct-current measurements of interface traps and oxide charges in LDD pMOSFETs with an n-well structure

• Main Authors: Jie, B.B., Li, M.F., Lou, C.L., Lo, K.F., Chim, W.K., Chan, D.S.H.
• Other Authors: ELECTRICAL ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/72582
• Institution: National University of Singapore

Proceedings of the International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA