Folded gate LDMOS with low on-resistance and high transconductance

Folded gate LDMOS with low on-resistance and high transconductance

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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Bibliographic Details
Main Authors: Xu, S., Zhu, Y., Foo, P.-D., Liang, Y.C., Sin, J.K.O.
Other Authors: INSTITUTE OF MICROELECTRONICS
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/72642
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Institution: National University of Singapore
Description
Summary:IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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