Folded gate LDMOS with low on-resistance and high transconductance
IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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2014
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sg-nus-scholar.10635-726422015-04-06T07:11:21Z Folded gate LDMOS with low on-resistance and high transconductance Xu, S. Zhu, Y. Foo, P.-D. Liang, Y.C. Sin, J.K.O. INSTITUTE OF MICROELECTRONICS ELECTRICAL ENGINEERING IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) 55-56 PISDE 2014-06-19T05:10:21Z 2014-06-19T05:10:21Z 2000 Conference Paper Xu, S.,Zhu, Y.,Foo, P.-D.,Liang, Y.C.,Sin, J.K.O. (2000). Folded gate LDMOS with low on-resistance and high transconductance. IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) : 55-56. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/72642 NOT_IN_WOS Scopus |
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IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) |
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INSTITUTE OF MICROELECTRONICS |
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INSTITUTE OF MICROELECTRONICS Xu, S. Zhu, Y. Foo, P.-D. Liang, Y.C. Sin, J.K.O. |
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Conference or Workshop Item |
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Xu, S. Zhu, Y. Foo, P.-D. Liang, Y.C. Sin, J.K.O. |
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Xu, S. Zhu, Y. Foo, P.-D. Liang, Y.C. Sin, J.K.O. Folded gate LDMOS with low on-resistance and high transconductance |
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Xu, S. |
title |
Folded gate LDMOS with low on-resistance and high transconductance |
title_short |
Folded gate LDMOS with low on-resistance and high transconductance |
title_full |
Folded gate LDMOS with low on-resistance and high transconductance |
title_fullStr |
Folded gate LDMOS with low on-resistance and high transconductance |
title_full_unstemmed |
Folded gate LDMOS with low on-resistance and high transconductance |
title_sort |
folded gate ldmos with low on-resistance and high transconductance |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/72642 |
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