New low-voltage contrast mechanism to image local defects in very thin silicon dioxide films. True oxide electron beam induced current

New low-voltage contrast mechanism to image local defects in very thin silicon dioxide films. True oxide electron beam induced current

Annual Proceedings - Reliability Physics (Symposium)

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Bibliographic Details
Main Authors: Lau, W.S., Chan, D.S.H., Phang, J.C.H., Chow, K.W., Pey, K.S., Lim, Y.P., Cronquist, B.
Other Authors: ELECTRICAL ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/72788
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Institution: National University of Singapore
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Summary:Annual Proceedings - Reliability Physics (Symposium)

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