Continuum modeling of post-implantation damage and the effective plus factor in crystalline silicon at room temperature

Continuum modeling of post-implantation damage and the effective plus factor in crystalline silicon at room temperature

10.1016/j.tsf.2005.09.167

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Bibliographic Details
Main Authors: Chan, H.Y., Srinivasan, M.P., Benistant, F., Mok, K.R., Chan, L., Jin, H.M.
Other Authors: CHEMICAL & BIOMOLECULAR ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Subjects:
Diffusion-limited kinetics
Ostwald ripening
Transient enhanced diffusion
Online Access:http://scholarbank.nus.edu.sg/handle/10635/74522
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Institution: National University of Singapore
Description
Summary:10.1016/j.tsf.2005.09.167

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