Effects of tungsten polycidation on the hot-carrier degradation in buried-channel LDD p-MOSFET's

Japanese Journal of Applied Physics, Part 2: Letters

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Main Authors: Ang, D.S., Ling, C.H.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80382
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-803822015-02-20T00:40:47Z Effects of tungsten polycidation on the hot-carrier degradation in buried-channel LDD p-MOSFET's Ang, D.S. Ling, C.H. ELECTRICAL ENGINEERING Japanese Journal of Applied Physics, Part 2: Letters 35 12 A L1572-L1574 JAPLD 2014-10-07T02:56:55Z 2014-10-07T02:56:55Z 1996-12-01 Article Ang, D.S.,Ling, C.H. (1996-12-01). Effects of tungsten polycidation on the hot-carrier degradation in buried-channel LDD p-MOSFET's. Japanese Journal of Applied Physics, Part 2: Letters 35 (12 A) : L1572-L1574. ScholarBank@NUS Repository. 00214922 http://scholarbank.nus.edu.sg/handle/10635/80382 NOT_IN_WOS Scopus
institution National University of Singapore
building NUS Library
country Singapore
collection ScholarBank@NUS
description Japanese Journal of Applied Physics, Part 2: Letters
author2 ELECTRICAL ENGINEERING
author_facet ELECTRICAL ENGINEERING
Ang, D.S.
Ling, C.H.
format Article
author Ang, D.S.
Ling, C.H.
spellingShingle Ang, D.S.
Ling, C.H.
Effects of tungsten polycidation on the hot-carrier degradation in buried-channel LDD p-MOSFET's
author_sort Ang, D.S.
title Effects of tungsten polycidation on the hot-carrier degradation in buried-channel LDD p-MOSFET's
title_short Effects of tungsten polycidation on the hot-carrier degradation in buried-channel LDD p-MOSFET's
title_full Effects of tungsten polycidation on the hot-carrier degradation in buried-channel LDD p-MOSFET's
title_fullStr Effects of tungsten polycidation on the hot-carrier degradation in buried-channel LDD p-MOSFET's
title_full_unstemmed Effects of tungsten polycidation on the hot-carrier degradation in buried-channel LDD p-MOSFET's
title_sort effects of tungsten polycidation on the hot-carrier degradation in buried-channel ldd p-mosfet's
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/80382
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