Effects of tungsten polycidation on the hot-carrier degradation in buried-channel LDD p-MOSFET's

Japanese Journal of Applied Physics, Part 2: Letters

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Bibliographic Details
Main Authors: Ang, D.S., Ling, C.H.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80382
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Institution: National University of Singapore

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