Effects of tungsten polycidation on the hot-carrier degradation in buried-channel LDD p-MOSFET's
Japanese Journal of Applied Physics, Part 2: Letters
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Main Authors: | Ang, D.S., Ling, C.H. |
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Other Authors: | ELECTRICAL ENGINEERING |
Format: | Article |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/80382 |
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Institution: | National University of Singapore |
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