Extraction of channel length in 0.1 μm NMOSFET by gate to drain capacitance

Electronics Letters

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Bibliographic Details
Main Authors: Ling, C.H., Ang, D.S., Dutoit, M.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Subjects:
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80412
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Institution: National University of Singapore
Description
Summary:Electronics Letters