Extraction of channel length in 0.1 μm NMOSFET by gate to drain capacitance
Electronics Letters
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Main Authors: | Ling, C.H., Ang, D.S., Dutoit, M. |
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Other Authors: | ELECTRICAL ENGINEERING |
Format: | Article |
Published: |
2014
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Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/80412 |
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Institution: | National University of Singapore |
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