Extraction of channel length in 0.1 μm NMOSFET by gate to drain capacitance

Electronics Letters

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Main Authors: Ling, C.H., Ang, D.S., Dutoit, M.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
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Online Access:http://scholarbank.nus.edu.sg/handle/10635/80412
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spelling sg-nus-scholar.10635-804122015-01-14T08:44:13Z Extraction of channel length in 0.1 μm NMOSFET by gate to drain capacitance Ling, C.H. Ang, D.S. Dutoit, M. ELECTRICAL ENGINEERING Capacitance measurement MOSFET Electronics Letters 32 4 402-404 ELLEA 2014-10-07T02:57:15Z 2014-10-07T02:57:15Z 1996-02-15 Article Ling, C.H.,Ang, D.S.,Dutoit, M. (1996-02-15). Extraction of channel length in 0.1 μm NMOSFET by gate to drain capacitance. Electronics Letters 32 (4) : 402-404. ScholarBank@NUS Repository. 00135194 http://scholarbank.nus.edu.sg/handle/10635/80412 NOT_IN_WOS Scopus
institution National University of Singapore
building NUS Library
country Singapore
collection ScholarBank@NUS
topic Capacitance measurement
MOSFET
spellingShingle Capacitance measurement
MOSFET
Ling, C.H.
Ang, D.S.
Dutoit, M.
Extraction of channel length in 0.1 μm NMOSFET by gate to drain capacitance
description Electronics Letters
author2 ELECTRICAL ENGINEERING
author_facet ELECTRICAL ENGINEERING
Ling, C.H.
Ang, D.S.
Dutoit, M.
format Article
author Ling, C.H.
Ang, D.S.
Dutoit, M.
author_sort Ling, C.H.
title Extraction of channel length in 0.1 μm NMOSFET by gate to drain capacitance
title_short Extraction of channel length in 0.1 μm NMOSFET by gate to drain capacitance
title_full Extraction of channel length in 0.1 μm NMOSFET by gate to drain capacitance
title_fullStr Extraction of channel length in 0.1 μm NMOSFET by gate to drain capacitance
title_full_unstemmed Extraction of channel length in 0.1 μm NMOSFET by gate to drain capacitance
title_sort extraction of channel length in 0.1 μm nmosfet by gate to drain capacitance
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/80412
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