Extraction of channel length in 0.1 μm NMOSFET by gate to drain capacitance

Electronics Letters

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Main Authors:	Ling, C.H., Ang, D.S., Dutoit, M.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Article
Published:	2014
Subjects:	Capacitance measurement MOSFET
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/80412
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-80412
record_format	dspace
spelling	sg-nus-scholar.10635-804122015-01-14T08:44:13Z Extraction of channel length in 0.1 μm NMOSFET by gate to drain capacitance Ling, C.H. Ang, D.S. Dutoit, M. ELECTRICAL ENGINEERING Capacitance measurement MOSFET Electronics Letters 32 4 402-404 ELLEA 2014-10-07T02:57:15Z 2014-10-07T02:57:15Z 1996-02-15 Article Ling, C.H.,Ang, D.S.,Dutoit, M. (1996-02-15). Extraction of channel length in 0.1 μm NMOSFET by gate to drain capacitance. Electronics Letters 32 (4) : 402-404. ScholarBank@NUS Repository. 00135194 http://scholarbank.nus.edu.sg/handle/10635/80412 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
topic	Capacitance measurement MOSFET
spellingShingle	Capacitance measurement MOSFET Ling, C.H. Ang, D.S. Dutoit, M. Extraction of channel length in 0.1 μm NMOSFET by gate to drain capacitance
description	Electronics Letters
author2	ELECTRICAL ENGINEERING
author_facet	ELECTRICAL ENGINEERING Ling, C.H. Ang, D.S. Dutoit, M.
format	Article
author	Ling, C.H. Ang, D.S. Dutoit, M.
author_sort	Ling, C.H.
title	Extraction of channel length in 0.1 μm NMOSFET by gate to drain capacitance
title_short	Extraction of channel length in 0.1 μm NMOSFET by gate to drain capacitance
title_full	Extraction of channel length in 0.1 μm NMOSFET by gate to drain capacitance
title_fullStr	Extraction of channel length in 0.1 μm NMOSFET by gate to drain capacitance
title_full_unstemmed	Extraction of channel length in 0.1 μm NMOSFET by gate to drain capacitance
title_sort	extraction of channel length in 0.1 μm nmosfet by gate to drain capacitance
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/80412
_version_	1681088882785910784

Extraction of channel length in 0.1 μm NMOSFET by gate to drain capacitance

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