Formation of Ti/Al ohmic contacts on Si-doped GaN epilayers by low temperature annealing

10.1088/0268-1242/15/6/317

Saved in:

Bibliographic Details
Main Authors:	Tan, L.S., Prakash, S., Ng, K.M., Ramam, A., Chua, S.J., Wee, A.T.S., Lim, S.L.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/80446
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

id	sg-nus-scholar.10635-80446
record_format	dspace
spelling	sg-nus-scholar.10635-804462023-10-26T09:58:21Z Formation of Ti/Al ohmic contacts on Si-doped GaN epilayers by low temperature annealing Tan, L.S. Prakash, S. Ng, K.M. Ramam, A. Chua, S.J. Wee, A.T.S. Lim, S.L. ELECTRICAL ENGINEERING PHYSICS 10.1088/0268-1242/15/6/317 Semiconductor Science and Technology 15 6 585-588 SSTEE 2014-10-07T02:57:38Z 2014-10-07T02:57:38Z 2000-06 Article Tan, L.S., Prakash, S., Ng, K.M., Ramam, A., Chua, S.J., Wee, A.T.S., Lim, S.L. (2000-06). Formation of Ti/Al ohmic contacts on Si-doped GaN epilayers by low temperature annealing. Semiconductor Science and Technology 15 (6) : 585-588. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/15/6/317 02681242 http://scholarbank.nus.edu.sg/handle/10635/80446 000087585500018 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1088/0268-1242/15/6/317
author2	ELECTRICAL ENGINEERING
author_facet	ELECTRICAL ENGINEERING Tan, L.S. Prakash, S. Ng, K.M. Ramam, A. Chua, S.J. Wee, A.T.S. Lim, S.L.
format	Article
author	Tan, L.S. Prakash, S. Ng, K.M. Ramam, A. Chua, S.J. Wee, A.T.S. Lim, S.L.
spellingShingle	Tan, L.S. Prakash, S. Ng, K.M. Ramam, A. Chua, S.J. Wee, A.T.S. Lim, S.L. Formation of Ti/Al ohmic contacts on Si-doped GaN epilayers by low temperature annealing
author_sort	Tan, L.S.
title	Formation of Ti/Al ohmic contacts on Si-doped GaN epilayers by low temperature annealing
title_short	Formation of Ti/Al ohmic contacts on Si-doped GaN epilayers by low temperature annealing
title_full	Formation of Ti/Al ohmic contacts on Si-doped GaN epilayers by low temperature annealing
title_fullStr	Formation of Ti/Al ohmic contacts on Si-doped GaN epilayers by low temperature annealing
title_full_unstemmed	Formation of Ti/Al ohmic contacts on Si-doped GaN epilayers by low temperature annealing
title_sort	formation of ti/al ohmic contacts on si-doped gan epilayers by low temperature annealing
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/80446
_version_	1781783909124538368

Formation of Ti/Al ohmic contacts on Si-doped GaN epilayers by low temperature annealing

Similar Items