Formation of Ti/Al ohmic contacts on Si-doped GaN epilayers by low temperature annealing
10.1088/0268-1242/15/6/317
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Main Authors: | Tan, L.S., Prakash, S., Ng, K.M., Ramam, A., Chua, S.J., Wee, A.T.S., Lim, S.L. |
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Other Authors: | ELECTRICAL ENGINEERING |
Format: | Article |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/80446 |
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Institution: | National University of Singapore |
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