Formation of Ti/Al ohmic contacts on Si-doped GaN epilayers by low temperature annealing

10.1088/0268-1242/15/6/317

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Bibliographic Details
Main Authors: Tan, L.S., Prakash, S., Ng, K.M., Ramam, A., Chua, S.J., Wee, A.T.S., Lim, S.L.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80446
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Institution: National University of Singapore

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