Fowler-nordheim stress degradation in gate oxide: Results from gate-to-drain capacitance and charge pumping current

Fowler-nordheim stress degradation in gate oxide: Results from gate-to-drain capacitance and charge pumping current

10.1109/16.563376

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Bibliographic Details
Main Authors: Ling, C.H., Goh, Y.H., Ooi, J.A.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80451
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Institution: National University of Singapore
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Summary:10.1109/16.563376

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