Fowler-nordheim stress degradation in gate oxide: Results from gate-to-drain capacitance and charge pumping current
10.1109/16.563376
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Main Authors: | Ling, C.H., Goh, Y.H., Ooi, J.A. |
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Other Authors: | ELECTRICAL ENGINEERING |
Format: | Article |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/80451 |
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Institution: | National University of Singapore |
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