Fowler-nordheim stress degradation in gate oxide: Results from gate-to-drain capacitance and charge pumping current
10.1109/16.563376
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sg-nus-scholar.10635-804512023-10-30T20:20:22Z Fowler-nordheim stress degradation in gate oxide: Results from gate-to-drain capacitance and charge pumping current Ling, C.H. Goh, Y.H. Ooi, J.A. ELECTRICAL ENGINEERING 10.1109/16.563376 IEEE Transactions on Electron Devices 44 4 681-683 IETDA 2014-10-07T02:57:41Z 2014-10-07T02:57:41Z 1997 Article Ling, C.H., Goh, Y.H., Ooi, J.A. (1997). Fowler-nordheim stress degradation in gate oxide: Results from gate-to-drain capacitance and charge pumping current. IEEE Transactions on Electron Devices 44 (4) : 681-683. ScholarBank@NUS Repository. https://doi.org/10.1109/16.563376 00189383 http://scholarbank.nus.edu.sg/handle/10635/80451 A1997WQ14300025 Scopus |
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ELECTRICAL ENGINEERING |
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ELECTRICAL ENGINEERING Ling, C.H. Goh, Y.H. Ooi, J.A. |
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Ling, C.H. Goh, Y.H. Ooi, J.A. |
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Ling, C.H. Goh, Y.H. Ooi, J.A. Fowler-nordheim stress degradation in gate oxide: Results from gate-to-drain capacitance and charge pumping current |
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Ling, C.H. |
title |
Fowler-nordheim stress degradation in gate oxide: Results from gate-to-drain capacitance and charge pumping current |
title_short |
Fowler-nordheim stress degradation in gate oxide: Results from gate-to-drain capacitance and charge pumping current |
title_full |
Fowler-nordheim stress degradation in gate oxide: Results from gate-to-drain capacitance and charge pumping current |
title_fullStr |
Fowler-nordheim stress degradation in gate oxide: Results from gate-to-drain capacitance and charge pumping current |
title_full_unstemmed |
Fowler-nordheim stress degradation in gate oxide: Results from gate-to-drain capacitance and charge pumping current |
title_sort |
fowler-nordheim stress degradation in gate oxide: results from gate-to-drain capacitance and charge pumping current |
publishDate |
2014 |
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http://scholarbank.nus.edu.sg/handle/10635/80451 |
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