Fowler-nordheim stress degradation in gate oxide: Results from gate-to-drain capacitance and charge pumping current

10.1109/16.563376

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Main Authors: Ling, C.H., Goh, Y.H., Ooi, J.A.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80451
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-804512023-10-30T20:20:22Z Fowler-nordheim stress degradation in gate oxide: Results from gate-to-drain capacitance and charge pumping current Ling, C.H. Goh, Y.H. Ooi, J.A. ELECTRICAL ENGINEERING 10.1109/16.563376 IEEE Transactions on Electron Devices 44 4 681-683 IETDA 2014-10-07T02:57:41Z 2014-10-07T02:57:41Z 1997 Article Ling, C.H., Goh, Y.H., Ooi, J.A. (1997). Fowler-nordheim stress degradation in gate oxide: Results from gate-to-drain capacitance and charge pumping current. IEEE Transactions on Electron Devices 44 (4) : 681-683. ScholarBank@NUS Repository. https://doi.org/10.1109/16.563376 00189383 http://scholarbank.nus.edu.sg/handle/10635/80451 A1997WQ14300025 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description 10.1109/16.563376
author2 ELECTRICAL ENGINEERING
author_facet ELECTRICAL ENGINEERING
Ling, C.H.
Goh, Y.H.
Ooi, J.A.
format Article
author Ling, C.H.
Goh, Y.H.
Ooi, J.A.
spellingShingle Ling, C.H.
Goh, Y.H.
Ooi, J.A.
Fowler-nordheim stress degradation in gate oxide: Results from gate-to-drain capacitance and charge pumping current
author_sort Ling, C.H.
title Fowler-nordheim stress degradation in gate oxide: Results from gate-to-drain capacitance and charge pumping current
title_short Fowler-nordheim stress degradation in gate oxide: Results from gate-to-drain capacitance and charge pumping current
title_full Fowler-nordheim stress degradation in gate oxide: Results from gate-to-drain capacitance and charge pumping current
title_fullStr Fowler-nordheim stress degradation in gate oxide: Results from gate-to-drain capacitance and charge pumping current
title_full_unstemmed Fowler-nordheim stress degradation in gate oxide: Results from gate-to-drain capacitance and charge pumping current
title_sort fowler-nordheim stress degradation in gate oxide: results from gate-to-drain capacitance and charge pumping current
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/80451
_version_ 1781783909755781120